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CompolÀº »çÆÄÀ̾î, LiTaO3/LiNbO3, Ceramic, °¢Á¾
±Ý¼ÓÁ¾·ùÀÇ Polishing¿¡ Àû¿ëµÇ´Â Á¦Ç°À¸·Î
°í¼øµµ Colloidal Silica ÀÔ´Ï´Ù.
CompolÀº ÀÌÀü °øÁ¤ÀÇ °¡°ø¿¡¼ »ý±ä ¿¬¸¶Àç ÀÚ±¹ ¹× ÀÛÀº Scratch¸¦
°¨¼Ò ½ÃÄÑ Ç¥¸éÀÇ Á¶µµ¸¦
±Ø´ëÈ ½ÃÅ°´Âµ¥ Ź¿ùÇÑ Á¦Ç°ÀÔ´Ï´Ù. |
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20 |
50 |
80 |
120 |
EX
II |
SiO2 content (%) |
40 |
40 |
40 |
40 |
29 |
PH |
9.1 |
10.0 |
10.2 |
9.4 |
9.8 |
Specific Gravity |
1.29 |
1.29 |
1.29 |
1.29 |
1.20 |
Average particle
size (nm) |
10~20 |
30~50 |
62~82 |
70~95 |
43~59 |
Standard packing |
20kg
cubitainer |
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Applications : sapphire, CaF©ü, BGO, LiTaO©ý,
LiNbO©ýand other oxide crystals |
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50S |
50AD |
SiO2 content (%) |
49 |
49 |
PH |
10.9 |
11.3 |
Specific Gravity |
1.38 |
1.38 |
Average particle
size (nm) |
25 ~ 45 |
20 ~ 40 |
Polishing rate (§/min) |
0.6 ~ 1.0 |
0.7 ~ 1.1 |
Standard packing |
20kg
cubitainer |
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Applications : first and second polishing
of Si wafer |
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INSECÀº ÈÇÕ¹° ¹ÝµµÃ¼ÀÇ ³ôÀº °æ¸éÀ» ¾ò¾î³»±â À§ÇÏ¿© °³¹ßµÈ Á¦Ç°ÀÔ´Ï´Ù.
GaAS,GaP,IN-P°°Àº ´Ù¾ÓÇÑ Á¦Ç°ÀÇ ¼øÂ÷ÀûÀÎ PolishingÀÌ °¡´ÉÇϸç
°¢°¢ÀÇ °¡°ø¹° Ư¡¿¡ ¸ÂÃç Àû¿ëµÇ´Â ºÎºÐÀÌ ´Ù¸¨´Ï´Ù.
ÈÇÕ¹° ¹ÝµµÃ¼ÀÇ Æ¯¼º»ó ¾ÖĪÀ¸·Î È¿°ú¸¦ ±Ø´ëÈ Çϱâ À§ÇÏ¿© ¸ðµç Á¦Ç°ÀÌ
°ú¸³»óÅ·ΠµÇ¾î ÀÖÀ¸¸ç »ç¿ë Á÷Àü ³ì¿©¼ »ç¿ëÇØ¾ß ÇÕ´Ï´Ù. |
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POLIPLA´Â ÇÁ¶ó½ºÆ½ ·»Áî¿ëÀ¸·Î °³¹ßÇÑ Compound typeÀÇ Á¦Ç°ÀÔ´Ï´Ù.
±ÕÀÏÇÏ°Ô ºÐ»ê½ÃŲ °í¼øµµ Alumina¿Í PH°¡ ¾à 3~4ÀÇ Æ¯¼ö Á¶¼º¾×À¸·Î
¸¸µé¾î Á³½À´Ï´Ù.
³ôÀº °¡°ø·Â°ú Ç¥¸é Á¶µµ¸¦ ¾òÀ» ¼ö ÀÖÀ¸¸ç, »ç¿ë¸ñÀû¿¡ µû¶ó ´Ù¾çÇÑ Á¾·ùÀÇ
Á¦Ç°À» ¼±Åà °¡´ÉÇÕ´Ï´Ù. |
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TYPE |
103A |
107A |
103H |
207A |
203H |
PH |
3.7 |
3.7 |
3.7 |
3.4 |
3.4 |
Average partice
size (D50,
§) |
1.3 |
1.3 |
0.8 |
1.3 |
0.8 |
Specific gravity |
1.155 |
1.160 |
1.145 |
1.165 |
1.162 |
Polishing rate (g/5min) |
0.09 |
0.09 |
0.05 |
0.10 |
0.06 |
¡Ø Surface roughness
[Ra] (nm) |
3.3 |
3.3 |
2.2 |
3.0 |
2.1 |
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¡Ø Standard packaging : 1 U.S. Gallon plastic
coutainer |
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